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IRFIB5N50L 07/18/03 www.irf.com 1 smps mosfet hexfet power mosfet to-220 full-pak s d g absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 4.7 i d @ t c = 100c continuous drain current, v gs @ 10v 3.0 a i dm pulsed drain current 16 p d @t c = 25c power dissipation 42 w linear derating factor 0.33 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 13 v/ns t j operating junction and -55 to + 150 t stg storage temperature range c soldering temperature, for 10 seconds 300 (1.6mm from case ) mounting torque, 6-32 or m3 screw diode characteristics symbol parameter min. typ. max. unit s conditions i s continuous source current ??? ??? 4.7 mosfet symbol (body diode) a showing the i sm pulsed source current ??? ??? 16 integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25c, i s = 4.0a, v gs = 0v t rr reverse recovery time ??? 73 110 ns t j = 25c, i f = 4.0a ??? 99 150 t j = 125c, di/dt = 100a/s q rr reverse recovery charge ??? 200 310 nc t j = 25c, i s = 4.0a, v gs = 0v ??? 360 540 t j = 125c, di/dt = 100a/s i rrm reverse recovery current ??? 6.7 10 a t j = 25c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) 10lb in (1.1n m) features and benefits ?

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v dss r ds(on) typ. trr typ. i d 500v 0.67 ? 73ns 4.7a
2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). starting t j = 25c, l = 18mh, r g = 25 ? , i as = 4.0a, dv/dt = 13v/ns. (see figure 12a). i sd 4.0, di/dt 280a/s, v dd v (br)dss , t j 150c. pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . c oss eff.(er) is a fixed capacitance that stores the same energy as c oss while v ds is rising from 0 to 80% v dss . static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 500 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.43 ??? v/c r ds(on) static drain-to-source on-resistance ??? 0.67 0.80 ? v gs(th) gate threshold voltage 3.0 ??? 5.0 v i dss drain-to-source leakage current ??? ??? 50 a ??? ??? 2.0 ma i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 r g internal gate resistance ??? 2.0 ??? ? dynamic @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units gfs forward transconductance 2.8 ??? ??? s q g total gate charge ??? ??? 45 q gs gate-to-source charge ??? ??? 13 nc q gd gate-to-drain ("miller") charge ??? ??? 23 t d(on) turn-on delay time ??? 13 ??? t r rise time ??? 17 ??? ns t d(off) turn-off delay time ??? 26 ??? t f fall time ??? 10 ??? c iss input capacitance ??? 1000 ??? c oss output capacitance ??? 110 ??? c rss reverse transfer capacitance ??? 12 ??? c oss output capacitance ??? 1360 ??? pf v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 31 ??? v gs = 0v, v ds = 400v, ? = 1.0mhz c oss eff. effective output capacitance ??? 75 ??? c oss eff. (er) effective output capacitance ??? 55 ??? (energy related) avalanche characteristics symbol parameter typ. units e as sin g le pulse avalanche ener g y ??? mj i ar a va l anc h e c urrent ??? a e ar r epet i t i ve a va l anc h e e ner g y ??? mj thermal resistance symbol parameter typ. units r jc junction-to-case ??? c/w r ja junction-to-ambient ??? v ds = v gs , i d = 250a v ds = 500v, v gs = 0v v ds = 400v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 2.4a v gs = 30v f = 1mhz, open drain conditions v ds = 50v, i d = 2.4a v gs = -30v i d = 4.0a v ds = 400v v gs = 10v, see fig. 7 & 16 v dd = 250v i d = 4.0a r g = 9.0 ? v gs = 10v, see fig. 11a & 11b v gs = 0v v ds = 25v ? = 1.0mhz, see fig. 5 4.0 3.0 max. 140 v gs = 0v,v ds = 0v to 400v 65 max. 3.0
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.5v 20s pulse width tj = 25c vgs top 15v 12v 10v 8.0v 7.0v 6.5v 6.0v bottom 5.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.5v 20s pulse width tj = 150c vgs top 15v 12v 10v 8.0v 7.0v 6.5v 6.0v bottom 5.5v 0.01 0.1 1 10 100 5.0 6.0 7.0 8.0 9.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r , drain-to-source on resistance (normalized) ds(on) v = i = gs d 10v 4.0a tj, junction temperature (c)
4 www.irf.com fig 5. typical capacitance vs. drain-to-source voltage fig 8. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 7. typical gate charge vs. gate-to-source voltage 0 5 10 15 20 25 30 35 0 2 4 6 8 10 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 4.0a v = 100v ds v = 250v ds v = 400v ds fig 6. typ. output capacitance stored energy vs. v ds 0 100 200 300 400 500 600 v ds, drain-to-source voltage (v) 0 1 2 3 4 5 6 7 8 9 10 e n e r g y ( j )
www.irf.com 5 fig 10. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) i , drain current (a) c d fig 9. maximum safe operating area 1 10 100 1000 10000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec fig 11a. switching time test circuit
1 0.1 % + - fig 11b. switching time waveforms v ds 90% 10% v gs t d(on) t r t d(off) t f
6 www.irf.com fig 13. threshold voltage vs.temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.0 3.0 4.0 5.0 6.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a fig 12. maximum effective transient thermal impedance, junction-to-case 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 1 0 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -
fig 16a. gate charge test circuit fig 16b. basic gate charge waveform fig 14. maximum avalanche energy vs. drain current fig 15b. unclamped inductive waveforms fig 15a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 80 160 240 320 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 1.8a 2.5a 4.0a
8 www.irf.com p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 17. for n-channel hexfet power mosfets

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www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the automotive [q101] market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/03 to-220ab fullpak package is not recommended for surface mount application. to-220 full-pak part marking information to-220 full-pak package outline dimensions are shown in millimeters (inches) lead as signments 1 - gate 2 - drain 3 - source notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982 2 controlling dimension: inch. d c a b minimum creepage distance between a-b-c-d = 4.80 (.189) 3x 2.85 (.112) 2.65 (.104) 2.80 (.110) 2.60 (.102) 4.80 (.189) 4.60 (.181) 7.10 (.280) 6.70 (.263) 3.40 (.133) 3.10 (.123) ? - a - 3.70 (.145) 3.20 (.126) 1.15 (.045) min. 3.30 (.130) 3.10 (.122) - b - 0.90 (.035) 0.70 (.028) 3x 0.25 (.010) m a m b 2.54 (.100) 2x 3x 13.70 (.540) 13.50 (.530) 16.00 (.630) 15.80 (.622) 1 2 3 10.60 (.417) 10.40 (.409) 1.40 (.055) 1.05 (.042) 0.48 (.019) 0.44 (.017) assembly (yyww) lot code yy = ye ar ww = we e k notes: this part marking information applies to all devices produced before 02/26/2001 example: lot code e401 this is an irfi840g with assembly e 401 rect ifier logo international part number irf i840g dat e code 9245 and currently for parts manufactured in gb. notes: this part marking information applies to devices produced after 02/26/2001 in with assembly example: this is an irfi840g lot code 3432 as s e mb le d on ww 24 1999 in the assembly line "k" part numb e r lot code assembly international rectifier logo 34 32 924k ir f i840g dat e code ye ar 9 = 1999 week 24 line k l ocati on other than gb .

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